product summary part number bv dss r ds(on) i d jantx2n6794 JANTXV2N6794 features: n avalanche energy rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n-channel provisional data sheet no. pd-9.429b 500 volt, 3.0 w w w w w hexfet hexfet technology is the key to international rectifiers advanced line of power mosfet transis- tors. the efficient geometry achieves very low on- state resistance combined with high transconductance. hexfet transistors also feature all of the well-es- tablish advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu- ally any application where high reliability is required. jantx2n6794 JANTXV2N6794 [ref:mil-prf-19500/555] [generic:irff420] hexfet ? power mosfet absolute maximum ratings parameter jantx2n6794, JANTXV2N6794 units i d @ v gs = 10v, t c = 25c continuous drain current 1.5 i d @ v gs = 10v, t c = 100c continuous drain current 1.0 i dm pulsed drain current 6.0 p d @ t c = 25c max. power dissipation 20 w linear derating factor 0.16 w/k ? v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt a 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead t emperature 300 (0.063 in. (1.6mm) from case for 10.5 seconds) weight 0.98 (typical) g o c a 1.5a 3.0 w 500v
thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case 6.25 r thja junction-to-ambient 175 k/w typical socket mount source-drain diode ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 1.5 modified mosfet symbol showing the i sm pulse source current (body diode) 6.0 integral reverse p-n junction rectifier. v sd diode forward voltage 1.2 v t j = 25c, i s = 1.5a, v gs = 0v ? t rr reverse recovery time 900 ns t j = 25c, i f = 1.5a, di/dt 100a/ m s q rr reverse recovery charge 5.9 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 500 v v gs = 0v, i d = 1.0 ma d bv dss / d t j temperature coefficient of breakdown 0.43 v/c reference to 25c, i d = 1.0 ma voltage r ds(on) static drain-to-source 3.0 v gs = 10v, i d = 1.0a on-state resistance 3.45 w v gs = 10v, i d = 1.5a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a g fs forward transconductance 1.0 s ( )v ds > 15v, i ds = 1.0a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs = 0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 7.3 16.7 v gs = 10v, i d = 1.5a q gs gate-to-source charge 0.1 3.0 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 3.7 8.7 see figures 6 and 13 t d(on) turn-on delay time 40 v dd = 250v, i d = 1.5a, t r rise time 30 r g = 7.5 w , vgs = 10v t d(off) turn-off delay time 60 t f fall time 30 see figure 10 l d internal drain inductance 5.0 l s internal source inductance 15 c iss input capacitance 350 v gs = 0v, v ds = 25v c oss output capacitance 80 f = 1.0 mhz c rss reverse transfer capacitance 35 see figure 5 jantx2n6794, JANTXV2N6794 device w ? m a nc pf nh ns measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a
fig. 1 typical output characteristics t c = 25c fig. 2 typical output characteristics t c = 150c fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs.temperature fig. 5 typical capacitance vs. drain-to-source voltage fig. 6 typical gate charge vs. gate-to-source voltage jantx2n6794, JANTXV2N6794 device
jantx2n6794, JANTXV2N6794 device fig. 10b switching time waveforms fig. 10a switching time test circuit fig. 8 maximum safe operating area fig. 9 maximum drain current vs. case temperature fig. 7 typical source-to-drain diode forward voltage
fig. 13a gate charge test circuit fig. 12a unclamped inductive test circuit fig. 12b unclamped inductive waveforms fig. 11 maximum effective transient thermal impedance, junction-to-case vs. pulse duration jantx2n6794, JANTXV2N6794 device fig. 13b basic gate charge waveform
case outline and dimensions to-205af (modified to-39) repetitive rating; pulse width limited by maximum junction temperature. (see figure 11) @ v dd = 50v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) * [bv dss /(bv dss -v dd )] peak i l = 1.5a, v gs = 10v, 25 r g 200 w world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 10/96 jantx2n6794, JANTXV2N6794 device a i sd 1.5a, di/dt 50a/ m s, v dd bv dss , t j 150c ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c all dimensions are shown millimeters (inches)
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